• high performance LSIs in computers and op. amplifiers. • integrated power ICs in vehicle-mounted electronics parts, plasma display panels and air conditioners. • parts of MEMS (=Micro Electric & Mechanicel System).

Diameter 100,125,150,200 Crystal orientation <100><110> Dopant N Type(P, Sb), P Type(B) SOI layer thickness(um) 1.5~7 7~10 10~20 SOI thickness uniformity(um) +/-0.5 +/-1 +/-1.5 Buried oxide thickness(um) 0.5,1,2,3,4 Buried oxide thickness uniformity +/-5% Crystal quality Bulk level Surface quality Polished wafer level

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